AES Semigas


3 May 2023

Cambridge GaN Devices presents at PCIM

Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — is reflecting its transition from start-up to scale-up with a significantly increased presence at the Power, Control and Intelligent Motion (PCIM) Europe 2023 event in Nuremberg, Germany (9–11 May). The firm is unveiling the next generation of its ICeGaN high-electron-mobility transistor (HEMT) family, detailing innovations that support dual claims concerning ease-of-use and ruggedness, and providing a full suite of demonstrations.

“The world is eager for GaN to play a leading role in increasing sustainability in many aspects of our lives. CGD is playing a leading role in this movement, by delivering GaN devices that are the easiest to use, while at the same time, being the most rugged and reliable,” says co-founder & CEO Dr Giorgia Longobardi. “PCIM is an excellent stage for CGD to prove these statements, and we encourage every visitor to challenge us with their latest designs and applications.”

On 11 May (11.15-11.35am) on the Exhibitor Stage (Hall 9.551), Longobardi is introducing the new HEMT family with a presentation ‘CGD Introduce Next Level of Energy savings, Robustness & Reliability for 650V GaN with New ICeGaN Family of SoC Solutions’.

In booth 372 (Hall 7), CGD is presenting data from Virginia Tech that prove the ruggedness and reliability of the firm’s technology. Designers can also learn how they can easily evaluate CGD’s ICeGaN HEMTs without redesigning their existing boards.

A full range of demonstrations at PCIM incudes:

  • a 65W, 240mΩ QRF evaluation board using new ICeGaN devices that supports CGD’s claims of robustness and dv/dt immunity;
  • an active live demo of the QRF reference design connected to power meters will compare the new CGD HEMTs with those of a competitor;
  • a 350W, 55mΩ PFC2 demo will show the levels of monolithic integration that ICeGaN permits;
  • a 100W PFC and QRF reference design, developed with JVD as an exemplar of the collaboration and partnerships CGD is forging with international partners that are leaders in their fields.

“CGD has all the elements in place – technology, products, manufacturing, infrastructure, distribution – to ensure that we can support the burgeoning GaN market,” reckons chief commercial officer Andrea Bricconi. “We are ready to deliver our ICeGaN HEMTs in mass-production quantities for all markets.”

See related items:

CGD presents GaN-based power electronics at APEC

CGD’s ICeGaN HEMTs available in high volume

Tags: GaN power devices



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