AES Semigas


10 May 2023

CGD launches second series of ICeGaN 650V HEMTs

Fabless semiconductor company Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — has launched the second series of its ICeGaN 650V gallium nitride high-electron-mobility transistor (HEMT) family.

H2 Series ICeGaN HEMTs employ CGD’s smart gate interface that is said to virtually eliminate typical enhancement-mode (e-mode) GaN weaknesses, delivering significantly improved over-voltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. Like previous-generation devices, the new 650V H2 ICeGaN transistors are driven similarly to silicon MOSFETs, eliminating the need for complex and inefficient circuits, instead using commercially available industry gate drivers. Finally, H2 ICeGaN HEMTs feature a QG that is 10x lower than silicon parts, and QOSS is 5x less. This enables H2 ICeGaN HEMTs to greatly reduce switching losses at high switching frequencies, reducing size and weight. This results in what is claimed to be class-leading efficiency performance, 2% better than the best silicon MOSFETs in switch-mode power supply (SMPS) applications, it is reckoned.

“Independent research by Virginia Tech has proven ICeGaN to be industry’s most rugged GaN devices and, in terms of ease-of-use, they can be driven like a standard silicon MOSFET, so the learning curve which can slow market acceptance is eliminated,” says CEO & co-founder Giorgia Longobardi. “The efficiency of GaN is well known, and ICeGaN is impressive across the full load range.”

ICeGaN H2 Series transistors feature an innovative NL3 (No Load and Light Load) circuit, integrated on-chip alongside the GaN switch, resulting in what is claimed to be record-low power losses. An advanced clamping structure with integrated Miller clamp – also on-chip – eliminates the need for negative gate voltages, achieving true zero-volt turn-off, and improving dynamic RDS(ON) performance. These e-mode (normally off) single-chip GaN HEMTs include a monolithically integrated interface and protection circuit for unmatched gate reliability and design simplicity. Finally, a current sense function reduces power dissipation and allows direct connection to ground for optimized cooling and EMI.

“CGD has solved all the challenges that normally slow the adoption of a new technology,” claims Longobardi. “Furthermore, we are now ready to satisfy the mass market with our H2 Series ICeGaN transistors, which are available through an established supply chain.”

See related items:

Ruggedness of CGD’s ICeGaN technology proven by Virginia Tech

CGD’s ICeGaN HEMTs available in high volume

Tags: GaN power devices