AES Semigas


5 May 2023

Infineon launches CoolGaN 600V GIT HEMT portfolio

Infineon Technologies AG of Munich, Germany says that it has integrated the CoolGaN 600V hybrid-drain-embedded gate injection transistor (HD–GIT) technology into its in-house manufacturing. The firm is now releasing the complete portfolio of its GaN devices to the broader market.

Infineon says that, taking advantage of its fully owned and controlled supply chain, the expanded GaN portfolio includes a wide range of discrete and fully integrated GaN devices that far exceed JEDEC lifetime requirements. The new CoolGaN devices have been optimized for applications ranging from industrial switched-mode power supplies (SMPS) for servers, telecom and solar to consumer applications, such as chargers and adapters, motor drives, TV/monitor, and LED lighting systems.

The portfolio of CoolGaN discrete and integrated power stage (IPS) devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards (JESD47 and JESD22), says Infineon. The discrete CoolGaN GIT high-electron-mobility transistor (HEMT) devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- and TSON-8 packages and in multiple on-state resistance (RDS(on),max) values ranging from 42mΩ to 340mΩ. The IPS solutions come in the form of half-bridge and single-channel devices. Half-bridge solutions integrate two GaN switches and are housed in a TIQFN-28 package with RDS(on),max values of (2x) 190–650mΩ. Single-channel solutions are available in a thermally enhanced TIQFN-21 package with RDS(on),max values in the range 130–340mΩ.

Infineon says that its CoolGaN GIT technology features a unique combination of a robust gate structure, internal electrostatic discharge (ESD) protection, and excellent dynamic RDS(on) performance. It fully exploits the intrinsic properties of GaN to deliver what is said to be exceptional figures of merit (FoM) compared with silicon technology, such as ten times higher breakdown field, two times higher electron mobility, ten times lower output charge, zero reverse recovery charge, and ten times lower gate charge with linear output capacitance (COSS).

These technical features are said to provide significant design advantages such as very low RDS(on), improved efficiency in resonant circuits, the use of new topologies and current modulation, as well as fast and nearly lossless switching.

Infineon’s range of CoolGaN 600V GIT discrete devices includes both top- and bottom-side cooled (TSC/BSC) JEDEC-compliant packages. CoolGaN TSC power packages are claimed to be unique in the market and address higher-power requirements. The benefits for designers ultimately lead to compact and lightweight products with high power density, improved energy efficiency, and reduced total system costs. Infineon claims that its commitment to quality standards ensures unmatched robustness and long-term reliability, lowering operating and maintenance costs for high-energy-consumption applications.

The CoolGaN devices are in volume production, and samples can be ordered now. The CoolGaN 600V GIT HEMT portfolio is being showcased at the Power, Control and Intelligent Motion (PCIM) Europe 2023 event in Nuremberg, Germany (9–11 May).

See related items:

Infineon adds 400V and 600V devices to CoolGaN portfolio

Tags: Infineon GaN HEMT



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