News: Microelectronics
20 November 2023
Infineon adds 62mm package to CoolSiC 1200V and 2000V MOSFET module families
Infineon Technologies AG of Munich, Germany has expanded its CoolSiC 1200V and 2000V MOSFET module families with a new industry-standard package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced M1H silicon carbide (SiC) MOSFET technology. The package enables the use of SiC for mid-power applications from 250kW – where silicon reaches the limits of power density with insulated-gate bipolar transistor (IGBT) technology. Compared to a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, electric vehicle (EV) charger, traction, commercial induction cooking and power conversion systems.
Picture: Infineon’s 62mm CoolSiC MOSFET module.
The M1H technology enables a significantly wider gate voltage window, ensuring high robustness to driver and layout-induced voltage spikes at the gate without any restrictions even at high switching frequencies. In addition to that, very low switching and transmission losses minimize cooling requirements. Combined with a high reverse voltage, these devices meet another requirement of modern system design. By using Infineon’s CoolSiC chip technology, converter designs can be made more efficient, the nominal power per inverter can be increased and system costs can be reduced, says Infineon.
With baseplate and screw connections, the package features a very rugged mechanical design optimized for highest system availability, minimum service costs and downtime losses. Reliability is achieved through high thermal cycling capability and a continuous operating temperature (Tvjop) of 150°C. The symmetrical internal package design provides identical switching conditions for the upper and lower switches. Optionally, the thermal performance of the module can be further enhanced with pre-applied thermal interface material (TIM).
The CoolSiC 62mm package MOSFETs are available in 1200V variants of 5mΩ/180A, 2mΩ/420A and 1mΩ/560A. The 2000V portfolio will include the 4mΩ/300A and 3mΩ/400A variants. The portfolio will be completed in first-quarter 2024 with the 1200V/3mΩ and 2000V/5mΩ variants.
An evaluation board is available for rapid characterization of the modules (double pulse/continuous operation). For ease of use, it provides flexible adjustment of the gate voltage and gate resistors. At the same time, it can be used as a reference design for driver boards for volume production.
Infineon extends CoolSiC portfolio to 2kV voltage class
Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs
