AES Semigas


13 November 2023

Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors

Tokyo-based Mitsubishi Electric Corp is entering into a strategic partnership with discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology Co Ltd) to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips that Nexperia will use to develop SiC discrete devices.

The global expansion of the electric vehicle market is helping to drive the exponential growth of SiC power semiconductors, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to contribute significantly to global decarbonization and green transformation.

Mitsubishi Electric claims that it has established leading positions in applications such as high-speed trains, high-voltage industrial applications and home appliances, after launching the first SiC power modules for air conditioners in 2010 and becoming the first supplier of an all-SiC power module for Shinkansen bullet trains in 2015. Mitsubishi Electric says that it has accumulated expertise in the development and manufacturing of SiC power modules, which are known for their advanced performance and high reliability.

Going forward, Mitsubishi Electric expects to strengthen its partnership with Nexperia, whose devices are used in the automotive, industrial, mobile and consumer markets, contributing to decarbonization and sustainability. Mitsubishi Electric aims to continue to improve the performance and quality of its SiC chips and focus on the development of power modules using proprietary module technologies.

“This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia’s silicon carbide journey,” believes Mark Roeloffzen, senior VP & general manager of Nexperia’s Bipolar Discretes business group. “Mitsubishi Electric has a strong track record as a supplier of technically proven SiC device and modules. Combined with Nexperia’s high quality standards and expertise in discrete products and packaging, we will certainly generate positive synergies between both companies - ultimately enabling our customers to deliver highly energy-efficient products in the industrial, automotive or consumer markets they serve,” he adds.

“Nexperia is a leading company in the industrial sector with proven technologies for high-quality discrete semiconductors,” comments Masayoshi Takemi, executive officer & group president, Semiconductor & Device at Mitsubishi Electric. “We are delighted to enter into this co-development partnership that will leverage the semiconductor technologies of both companies.”

See related items:

Vishay to acquire Nexperia’s Newport Wafer Fab for $177m

DENSO and Mitsubishi Electric investing $1bn in Coherent’s silicon carbide business

Nexperia and KYOCERA AVX Salzburg to co-produce 650V SiC rectifier module for power applications

Coherent and Mitsubishi Electric collaborating to scale manufacturing of silicon carbide power electronics

Mitsubishi Electric to build new 8-inch SiC fab to boost power semi production

Nexperia expands wide-bandgap range by entering high-power silicon carbide diode market

Tags: Mitsubishi Electric SiC power MOSFET



Book This Space