AES Semigas


25 September 2023

Cambridge GaN Devices incorporates individual 2D barcode on GaN ICs

Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — claims to be first to incorporate an individual 2D barcode on a gallium nitride (GaN) IC, which can be read by a standard, commercial code reader. This not only enables CGD to scan packaged devices and identify the circuit and the batch but also to learn exactly where on the wafer each individual die was made, providing vital data concerning process ruggedness and reliability.

The ability to immediately identify a device using a cheap, commercial barcode reader can also speed up anti-counterfeiting measures, which will be of interest to companies operating in high-reliability fields, the firm reckons.

“Although we have a great deal of data to prove the ruggedness and reliability of our ICeGaN HEMTs, GaN is still a relatively new technology, certainly when compared to traditional silicon for power electronics applications,” notes CEO & co-founder Giorgia Longobardi. “By incorporating 2D barcodes we are able to provide extremely fast feedback to our manufacturing supply chain, which helps cement our relationships and scale-up for high-volume manufacture.”

See related items:

CGD signs global distribution deal with DigiKey

CGD launches second series of ICeGaN 650V HEMTs

CGD’s ICeGaN HEMTs available in high volume

Tags: GaN power devices


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