AES Semigas


20 September 2023

IQE and VisIC to co-develop D-Mode GaN power devices for EVs

Epiwafer and substrate maker IQE plc of Cardiff, Wales, UK has announced a strategic collaboration with VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride transistors for high-voltage automotive applications – to develop high-reliability gallium nitride D-Mode (D-Mode GaN) power products for use in electric vehicles (EV) inverters. The 200mm (8”) D-Mode GaN power epiwafers will be developed at IQE’s UK facilities.

VisIC says that its D3GaN technology (Direct Drive D-Mode GaN) can reduce power consumption, increase reliability and enhance performance in electric vehicles. By combining VisIC’s power electronics solutions with IQE's epitaxy, the partnership aims to accelerate the adoption of GaN-on-silicon technology in EVs, contributing to the evolution of sustainable transportation.

IQE says that the collaboration is another milestone in its strategy of diversifying into the high-growth power market, first announced at its 2022 Capital Markets Day. The firm sees significant opportunities in the GaN power epiwafer market in particular, which is forecast to reach $632m by 2027, according to market research firm Yole Group.

“This is another sign of the progress we are making in our diversification strategy, as we look to capture the significant growth opportunities in the GaN automotive power market, which is vital in supporting the transition to electric vehicles,” says IQE’s CEO Americo Lemos.

“Teaming up with IQE is a pivotal step towards reshaping the EV industry. Their track record of delivery in the sector and technological leadership means they are ideally placed for us to collaborate with to develop next-generation technology to power the electric vehicle revolution,” comments VisIC’s CEO & co-founder Dr Tamara Baksht. “Our D-Mode D3GAN technology has the potential to transform electric vehicles, making them more efficient, reliable and sustainable,” she claims. “The co-operation brings higher availability of ground-breaking technology for GaN-on-silicon and paves the way for a resilient supply chain to serve the automotive industry.”

Tags: IQE GaN-on-Si power transistor



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