AES Semigas


15 September 2023

Navitas presenting silicon carbide technology at ICSCRM

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) in Sorrento, Italy (17–22 September), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA is presenting two papers on 18 September:

  • ‘New Generation SiC MPS Diodes with Low Schottky Barrier Height’ by Aditi Agarwal, Siddarth Sundaresan, Jaehoon Park, Vamsi Mulpuri and Kailun Zhong (at 7:10pm); and
  • ‘650V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92mΩ-cm2, by Jaehoon Park, Siddarth Sundaresan, Aditi Agarwal, Vamsi Mulpuri, Nathaniel Walsh and Steven Smith (at 7:40pm).

Additionally, on 21 September (11:00–12:30) Navitas’ senior VP of SiC technology & operations Dr Sid Sundaresan is chairing the session on ‘Devices 4: Short circuit, avalanche and reliability’, which focuses on crucial topics in the field of SiC technology.

Navitas notes that its GeneSiC power devices — which are optimized for high-power, high-voltage and high-reliability SiC applications — address critical markets including electric vehicles, solar energy, energy storage, industrial applications, data centers, and consumer electronics. “With a voltage range spanning from 650V to 6.5kV, GeneSiC MOSFETs and Schottky MPS diodes offer performance and efficiency that pave the way for a more electrified and sustainable future,” the firm adds.

“Navitas’ presence at ICSCRM 2023 is a testament to the company’s unparalleled expertise in SiC technology and its commitment to driving innovation in the industry,” says Dr Ranbir Singh, Navitas’ executive VP for the GeneSiC business line.

Tags: SiC Schottky barrier diodes SiC power MOSFET



Book This Space