News: Microelectronics
4 April 2024
EPC Space launches rad-hard GaN gate driver IC
EPC Space LLC of Haverhill, MA, USA has launched the EPC7009L16SH, a radiation-hardened gallium nitride gate driver integrated circuit (IC) built on EPC’s proprietary eGaN IC technology.
The EPC7009L16SH is suitable for power management where size, efficiency and simple design are critical. It integrates input logic interface, under-voltage lockout (UVLO) protection, a 10V-to-5.25V linear regulator and driver circuit within a space-efficient, hermetic 16-pin SMT package to create a high-speed driver that can switch at rates of up to 3.0MHz. The total ionizing dose is guaranteed to 1000kRad and the SEE (single event effect) immunity for LET (linear energy transfer) at 84MeV/mg/cm2 with the IC’s primary supply voltage at 100% of its maximum operating value.
EPC Space says that eGaN transistors are becoming the transistor of choice in space for applications where higher switching frequency, power and radiation hardness are required. With the introduction of the EPC7009L16SH driver the full potential of eGaN HEMTs is unleashed, which is not possible with the current silicon-based drivers, the firm claims. Moreover, EPC7009L16SH can drive at least four EPC Space discrete GaN devices.
IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology, says EPC Space. Integrated devices in a single chip are easier to implement, easier to layout, easier to assemble, save space on the PCB, and increase efficiency, it adds.
“Integrated rad-hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications” says chief technology officer Max Zafrani.
The EPC7009L16SH is part of a new family of space-level rad-hard ICs that EPC and EPC Space are launching, starting this year. Rad-hard ICs are the next significant stage in the evolution of rad-hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.
Applications for the EPC7009L16SH include high-speed DC–DC conversion, motor drivers, power switches/actuators, and satellite electrical systems.
For 1000-unit quantities, priced is $350 each for engineering models and $522 each for rad-hard space-qualified.
Avnet to distribute EPC Space’s rad-hard GaN power devices
