News: Microelectronics
1 August 2024
Infineon launches CoolGaN Drive product family of integrated single switches and half-bridges with integrated drivers
Many different trends are taking center stage in both consumer electronics and industrial applications, such as portability, electrification, and weight reduction. All of these trends require compact and efficient designs. They also go hand in hand with unconventional PCB designs with severe space constraints that limit the use of external components.
To address these challenges, Infineon Technologies AG of Munich, Germany has expanded its GaN portfolio with the CoolGaN Drive product family, consisting of the CoolGaN Drive 700V G5 single switches (integrating one transistor plus gate driver in PQFN 5x6 and PQFN 6x8 packages) as well as the CoolGaN Drive HB 600V G5 devices (combining two transistors with integrated high- and low-side gate drivers in a LGA 6x8 package).
Picture: Infineon’s CoolGaN Drive product family consists of the CoolGaN Drive 700V G5 single switches, integrating one transistor plus gate driver, as well as the CoolGaN Drive HB 600V G5 devices, combining two transistors with integrated high- and low-side gate drivers.
The new product family enables improved efficiency, reduced system size, and overall cost savings. This makes the devices suitable for longer-range e-bikes, portable power tools, and lighter-weight household appliances such as vacuums, fans and hairdryers.
“For several years, Infineon has been focused on accelerating innovation in GaN to provide targeted solutions for real-world power challenges,” says Johannes Schoiswohl, senior VP & general manager, GaN Systems business line head at Infineon. “The new CoolGaN Drive product family is another proof point of how we support our customers in developing compact designs with high power density and efficiency through GaN.”
The CoolGaN Drive family offers a wide range of single switches and half bridges with integrated drivers based on the CoolGaN transistors 650V G5 (launched in May). Depending on the product group, the components feature a bootstrap diode and are characterized by loss-free current measurement, and adjustable switch-on and switch-off dV/dt. They also provide OCP/OTP/SCP protection functions. As a result, the devices enable higher switching frequencies, leading to smaller and more efficient system solutions with high power density. At the same time, the bill of materials (BoM) is reduced. This not only results in a lower system weight but also reduces the carbon footprint, says Infineon.
Samples of the half-bridge solutions are available now. Single-switch samples will be available from fourth-quarter 2024.
Infineon launches CoolGaN transistor families built on 8-inch foundry processes
