News: Microelectronics
2 August 2024
Navitas adds TOLL package to Gen-3 ‘Fast’ 650V SiC MOSFET range
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650V SiC MOSFETs into a thermally enhanced, rugged, high-speed, surface-mount TOLL (transistor outline leadless) package designed for demanding, high-power, high-reliability applications.
Combining high-power capability and what is claimed to be best-in-class low on-resistance of 20–55mΩ, the 650V SiC MOSFETs have been optimized for the fastest switching speed, highest efficiency, and increased power density demanded by applications such as artificial intelligence (AI) data-center power supplies, electric vehicle (EV) charging, and energy storage and solar solutions (ESS).
Navitas’ GeneSiC products use a proprietary ‘trench-assisted planar’ technology that provides what is claimed to be world-leading efficiency performance over the temperature range, with G3F MOSFETs delivering high-speed, cool-running performance that ensures up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products.
Navitas’ latest 4.5kW AI power system reference design features the G3F45MT60L (650V, 40mΩ, TOLL) G3F SiC MOSFET in an interleaved CCM-TP PFC topology. Complemented by the NV6515 (650V, 35mΩ, TOLL) GaNSafe power IC in the LLC stage, the 4.5kW solution has a peak efficiency above 97% and, at 137W/inch3, it is claimed to be the world’s highest-power-density AI PSU. For 400V-rated EV battery systems, G3F in TOLL is a suitable technology for on-board chargers (OBC), DC–DC converters, and traction drives ranging from 6.6kW to 22kW.
The surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the traditional D2PAK-7L, enabling highest-power-density solutions, as demonstrated in the 4.5kW AI solution. Additionally, with a minimal package inductance of only 2nH, excellent fast-switching performance and lowest dynamic losses are achieved.
The G3F family in TOLL package is released and available for purchase now.
Navitas launches Gen-3 Fast 650V and 1200V SiC MOSFETs
Navitas highlights power semis for AI, EV, industrial, solar and energy storage at PCIM
