News: Microelectronics
5 August 2024
Navitas’ GaNFast ICs power expanded Samsung Galaxy smartphone portfolio
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that Samsung has expanded adoption of its GaNFast ICs from the original flagship Galaxy S22, S23 and S24 to the mainstream Galaxy A, and Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with enhanced Galaxy AI features.
Since GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight, GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a 50% shrink versus prior designs.
The new 25W charger (EP-TP2510) features new energy-saving technology to reduce standby losses by 75% to only 5mW, which aligns with Navitas’ environmental advances, where every GaNFast IC saves 4kg of CO2 versus silicon chips, it is reckoned.
“Our production partnership with Samsung dates back to the Galaxy S22 Ultra, and today’s announcement reflects the dramatic expansion of GaN from niche, flagship designs to adoption in high-volume, mainstream phones,” says David Carroll, senior VP worldwide sales for Navitas.
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Navitas’ GaNFast 25W fast charger adopted for Samsung’s flagship Galaxy S23 phone
