News: Microelectronics
27 December 2024
EPC Space achieves GaN’s first JANS MIL-PRF-19500 certification
EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) says that both its facility in Andover, Massachusetts, and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.
EPC Space says that certification highlights its role in providing semiconductors for critical space applications. Managed by the US Department of Defense, the MIL-PRF-19500 certification sets the bar for reliability, performance and environmental resilience in semiconductor components. EPC Space claims that its achievement in obtaining this certification for gallium nitride (GaN) high-electron-mobility transistors (HEMT) is a world first.
“Securing the JANS certification is a direct result of our relentless pursuit of quality,” says EPC Space’s CEO Bel Lazar. “Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demanding conditions,” he adds.
“The commitment to the MIL-PRF-19500 standard not only guarantees the durability and performance of EPC Space’s products but also reinforces the company’s dedication to supporting its customers in achieving their critical objectives,” says Alex Lidow, CEO of EPC Corp.
Looking ahead, EPC Space is set to launch 18 JANS-certified rad-hard GaN HEMT parts, ranging from 40V to 300V, throughout 2025.
EPC Space unveils dynamic cross-reference tool for rad-hard MOSFET device replacement
EPC Space launches 40V rad-hard GaN FETs with low on-resistance and gate charge
