News: Microelectronics
6 December 2024
Navitas showcasing GaN and SiC technologies at CES 2025
In the ‘Planet Navitas’ suite (Tech West, Venetian suite 29-335) at the Consumer Electronics Show (CES 2025) in Las Vegas (7–10 January), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is showcasing several technology and system breakthroughs for artificial intelligence (AI) data centers, electric vehicles (EVs) and mobile applications. These include:
- World’s only 650V bi-directional GaNFast power ICs: GaN technology for next-generation solutions that require the highest efficiency and power density, with the lowest complexity, and significant component reduction.
- World’s First 8.5kW AI Data Center Power Supply: The first 8.5kW OCP power solution achieves 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs, enabling the world’s highest power density with 137W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared with existing solutions.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation, GeneSiC technology is said to lead on performance with Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides what is claimed to be world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster-charging EVs and up to 3x more powerful AI data centers.
- GaNSlim: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small-form-factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- SiCPAK High-Power Modules – Built for Endurance and Performance: Utilizing ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GaNSense motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device, it is claimed.
- GeneSiC MOSFET die specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- Sustainable Solutions: Navitas’ vision is to reduce up to 6Gtons/year of CO2 by 2050 with technologies that offer higher efficiency, density, and grid independence.
Navitas was recently ranked among the Top 500 fastest-growing technology companies by Deloitte’s Technology Fast 500 for the third consecutive year.
Navitas ranked in Deloitte Technology Fast 500 list for third consecutive year
Navitas presents first 8.5kW AI data-center power supply powered by GaN and SiC
