News: Microelectronics
2 December 2024
QPT files patent for die attach process that boosts waste heat removal by up to 15x
As the power handled by transistors increases to meet the needs of new applications, power electronics packaging will increasingly struggle to remove waste heat from the die. Independent power electronics company Quantum Power Transformation (QPT) Ltd of Cambridge, UK — which was founded in 2019 and develops gallium nitride (GaN)-based electric motor controls — has hence filed a patent for a novel way to attach dies to heat spreaders or substrates which are typically aluminium nitride (AlN). Named qAttach, QPT says that this provides a much better way to conduct heat away from the die and also increases reliability as the assembly process places less stress on the substrates, which is one of the biggest challenges faced by the high-power semiconductor packaging industry.
QPT developed the new process for use with the gallium nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high-power, high-voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high-voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating. qAttach is said to solve this problem, as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now being efficiently used for next-generation, high-power, high-voltage applications in automotive, industrial motors and to finally deliver on the promise of low-cost, high-voltage GaN transistors.
“The problem with the current attachment approach is that the sinter layer, which fixes the die to the substrate, is typically 30–60μm thick and this forms a thermal barrier that impedes the transfer of heat away from the chip,” notes chief technology officer Rob Gwynne. “We use reliable, well-established technologies from other fields in a novel way to enable us to create the qAttach attachment layer that is potentially down to a fraction of a micron thick. This major reduction in the thermal barrier thickness means that our solution is up to ten times better at transferring waste heat away from the chip,” he adds. “As we refine the process, we are expecting even better thermal transmission rates through this layer.”
With the conventional approach, the heat from the die has to pass through the thick sinter layer to the substrate to be dissipated via the heat sink, as in Figure 1, explains Gwynne. The PCB is attached to the top (and around the heat spreader in embedded packages) so there is little heat dissipation that way. QPT’s new structure in Figure 2 is a sandwich of heat sink, substrate, qAttach layer, die, qAttach layer, substrate and heat sink with the PCB surrounding the structure at the sides. Because the qAttach layer is ultrathin, heat can be transferred through and away much more quickly, plus this can also now happen from the top of the die to increase the total rate of heat removal by up to 15x.
The qAttach technology is said to have other improvements over the existing sintering process. Firstly, the substrate can be much thinner, as the application of the large force needed by sintering is not required. The thinner substrate significantly reduces thermal resistance to further help heat transfer away to the heat sink.
Secondly, the lower pressure required for this process means that the manufacturing stresses on the dies are lower. This reduces the possibility of device failure, which is of particular interest to automotive companies, where reliability is key.
Thirdly, the ultrathin qAttach layer is not a laminar sheet. It has a proprietary geometry that constrains expansion predominantly in the Z axis (which is perpendicular to the qAttach layer) when heated, so delamination of the attach layer from the die and substrate does not occur, which is a major issue with existing attachment methods. This is because the conventional, continuous sheet of the sintered approach has about seven times the thermal expansion of the die and about three times that of the AlN substrate. These differing rates of expansion create considerable stresses over the length of a large power die, which can result in the structure ripping itself apart when heated. This delamination is the largest cause of failures in power packages, so this new approach further improves the reliability of the assembled device.
“Our new qAttach process is a universal solution to solving the growing problem of the removal of waste heat that would otherwise hold back the development of next-generation power electronics,” says Gwynne. “The ability of qAttach to improve heat transfer away from the die by up to 15x can also be used to solve the removal of waste heat from almost any other type of transistors such as silicon carbide (SiC) to enable them to handle higher power loads than they can at present,” he adds. “We already have a couple of leading multi-nationals interested in licensing this process, as they can see the strategic benefits that this innovation would bring to their product lines.”
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