AES Semigas

IQE

10 December 2024

ROHM and TSMC collaborating on development and volume production of GaN power devices for EVs

Japan-based ROHM Co Ltd and Taiwan Semiconductor Manufacturing Co (TSMC) have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.

The partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology to meet the growing demand for GaN’s superior high-voltage and high-frequency properties over silicon for power devices.

GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC says that it supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).

The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron-mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN series, including the 45W AC adapter (fast charger) C4 Duo produced by Innergie, a brand of Delta Electronics Inc.

“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings,” notes Katsumi Azuma, board member & senior managing executive officer at ROHM. “Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology. In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry,” he adds.

“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” says Chien-Hsin Lee, senior director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”

See related items:

ROHM begins mass production of 650V GaN HEMTs

Tags: TSMC Rohm GaN power devices

Visit: www.tsmc.com

Visit: www.rohm.com

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