News: Microelectronics
14 February 2024
EPC Space launches first rad-hard GaN power stage IC
EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments) has launched a 50V, 6A rad-hard GaN power stage IC designed for space applications. The EPC7011L7SH is a single-chip driver plus eGaN FET half-bridge power stage IC in a compact aluminium nitride ceramic surface-mount technology package. Integration is implemented using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip with high-speed switching capability of 2+MHz.
IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to implement, easier to lay out, easier to assemble, save space on the PCB, and increase efficiency, says EPC.
“Integrated rad-hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications,” says EPC Space’s CEO Bel Lazar.
The EPC7011L7SH is part of a family of space-level rad-hard ICs that EPC and EPC Space will be launching starting this year. Rad-hard ICs are the next significant stage in the evolution of rad-hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.
Applications of the EPC7011L7SH include single- and multi-phase motor drivers for reaction wheel assemblies (RWAs), robotic actuators, and point-of-load converters.
For 1000-unit quantities, engineering models are priced at US$445, and rad-hard space-qualified are priced at US$665.
