News: Microelectronics
5 February 2024
VMAX using Infineon’s CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode
Infineon Technologies AG of Munich, Germany says that its new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching insulated-gate bipolar transistor (IGBT) and CoolSiC Schottky diode has been chosen by VMAX (a Chinese manufacturer of power electronics and motor drives for new energy vehicles) for its next-generation 6.6kW OBC/DC-DC on-board chargers. Infineon’s components come in a D2PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve the optimum cost-performance ratio for both hard and soft-switching topologies. Due to their performance, optimized power density and quality, the power devices are suitable for VMAX’s on-board chargers.
Picture: Infineon’s new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode in a D2PAK package, combining TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes.
“We are proud to choose Infineon’s CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density,” says Jinzhu Xu, product line director & chief engineer R&D Department at VMAX. “This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” he adds.
“Together, we will continue to drive e-mobility advancements, providing efficient solutions that meet the requirements of the industry in terms of performance, quality and system cost,” says Robert Hermann, VP for Automotive High Voltage Chips and Discretes at Infineon.
Infineon says that, with its fast, hard-switching TRENCHSTOP 5 650V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode, the hybrid discrete benefits from very low switching losses at switching speeds above 50kHz. This makes the device a suitable option for high-power electric vehicle charging systems. In addition, the robust fifth-generation CoolSiC Schottky diode offers increased robustness against surge currents, maximizing reliability. Furthermore, the diffusion soldering of the SiC diode has improved the thermal resistance (Rth) to the package for small chip sizes, resulting in increased power-switching capability. With these features, it enables optimum system reliability and longevity, meeting the stringent requirements of the automotive industry, says Infineon. To further maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D2PAK package.
The CoolSiC Hybrid Discrete with TRENCHSTOP 5 Fast-Switching IGBT co-packed with CoolSiC Schottky Diode G5 is available now.
