News: Microelectronics
7 February 2024
Worksport using Infineon’s GaN power transistors in converters of its portable power stations
Infineon Technologies AG of Munich, Germany has announced a collaboration in which its GS-065-060-5-B-A gallium nitride (GaN) power transistors will be used by Worksport Ltd of West Seneca, NY, USA in the converters for its portable power stations in order to increase their efficiency and power density. Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs. In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.
Picture: Worksport will use Infineon’s GS-065-060-5-B-A GaN power transistors in the converters for its portable power stations to increase efficiency and power density.
“Infineon’s high-quality standard and solid supply chain provide us with the best components to ensure power-dense converters for our COR system product line,” comments Worksport’s CEO Steven Rossi. The company’s COR battery system can be integrated into a pickup truck or recharged by any solar panel or wall outlet. By replacing the former silicon switch in the power converter with Infineon’s GaN power semiconductors and operating the transistors at higher switching frequency, Worksport will be able to reduce the battery system weight by 33% and system costs by up to 25%.
It is reckoned that the working relationship with Infineon will also help Worksport to reduce CO2 in the manufacturing process.
“To further drive electrification and decarbonization, the industry’s power designs require innovation,” says Johannes Schoiswohl, business line head GaN Systems of Infineon’s Power & Sensor Systems Division. “With our GaN power semiconductors we enable Worksport to create the next-generation portable power stations that users require.”
Available in a bottom-cooled, low-inductance GaNPX package, Infineon’s GS-065-060-5-B-A is an automotive-grade 650V enhancement-mode GaN-on-silicon power transistor that offers very low junction-to-case thermal resistance for demanding high-power applications such as on-board chargers, industrial motor drives and solar inverters. Furthermore, it features simple gate drive requirements (0V to 6V) and a transient-tolerant gate drive (-20/+10V).
