News: Microelectronics
28 February 2024
Infineon launches 750V G1 CoolSiC MOSFET product family
Infineon Technologies AG of Munich, Germany has launched the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
The product family includes both industrial-grade and automotive-grade silicon carbide (SiC) MOSFETs that are optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full-bridge (PSFB) topologies. The MOSFETs are suitable for use in both typical industrial applications, such as electric vehicle (EV) charging, industrial drives, solar and energy storage systems, solid state circuit breakers, UPS systems, servers/ data centers, telecoms, and in the automotive sector, such as on-board chargers (OBC) and DC–DC converters.
Picture: Infineon’s new 750V G1 discrete CoolSiC MOSFET.
The CoolSiC MOSFET 750V G1 technology features what is claimed to be excellent RDS(on) x Qfr and superior RDS(on) x Qoss figures-of-merit (FOMs), resulting in ultra-high efficiency in hard-switching and soft-switching topologies, respectively. Its unique combination of high threshold voltage (VGS(th), typical of 4.3V) with low QGD/QGS ratio ensures high robustness against parasitic turn-on and enables unipolar gate driving, leading to increased power density and low cost of the systems. All devices use Infineon’s proprietary die-attach technology which delivers what is claimed to be outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design - combined with Infineon’s qualification standards - delivers robust and long-term performance.
With a granular portfolio ranging from 8mΩ to 140mΩ RDS(on) at 25°C, the new CoolSiC MOSFET 750V G1 product family addresses a wide range of needs. Its design is said to ensure lower conduction and switching losses, boosting overall system efficiency. Its packages minimize thermal resistance, facilitate improved heat dissipation, and optimize in-circuit power loop inductance, resulting in high power density and reduced system costs. The product family features the QDPAK top-side-cooled package.
The CoolSiC MOSFET 750V G1 for automotive applications comes in QDPAK TSC, D2PAK-7L and TO-247-4 packages, while for industrial applications QDPAK TSC and TO-247-4 packages are offered.
