News: Microelectronics
15 February 2024
Navitas celebrates tenth anniversary
In a series of events during 2024, beginning with the IEEE Applied Power Electronics Conference & Exposition (APEC 2024) and ‘GaNFast Blast!’ celebration in Long Beach, CA, USA from 26 February, gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is marking 10 years of innovation and growth in a broad range of fast-growing markets, from ultra-fast mobile charging to artificial intelligence (AI) data centers, renewable energy and EVs.
“From a trailer to a $1bn+ IPO in record time and a worldwide presence with a 300-strong, highly skilled team, we’ve so far delivered over 150 million devices and saved over 200,000 tons of CO2,” says CEO & co-founder Gene Sheridan. “Growth awards from Deloitte and Forbes highlight our revenue growth, and a long-term guidance to grow many times faster than the market,” he adds.
“From our founding in 2014 as a next-generation power semiconductor pioneer, Navitas has amassed over 250 patents across ‘wide-bandgap’ technologies gallium nitride and silicon carbide, as well as patented, enabling high-speed controller and digital isolators,” notes co-founder & chief operating officer/chief technology officer Dan Kinzer. “Leading-edge technology, key talent and a passion for innovation are critical factors in Navitas’ success to-date, and a strong foundation for further technology and continued market leadership.”
With each new generation of GaN IC in only 15-18 months, Navitas cites GaN technology milestones during its first decade including the launch of the world’s first integrated GaNFast power IC; GaNSense - the first integrated precision current-sensing GaN chip; GaNSafe — the most protected GaN power device for high-reliability systems; and the unveiling of a new bi-directional GaN power IC platform with up to 9x smaller chip size than legacy silicon MOSFETs or IGBTs.
For higher voltages and higher-power applications, Navitas offers what it claims is the industry’s broadest range (650-6500V) of SiC bare die and packaged devices, with best-in-class efficiency, ruggedness and high-frequency operation, based on GeneSiC technology. This enables Navitas to supply both SiC and GaN power semiconductors to markets ranging from consumer electronics, AI data centers and electric vehicles to renewable energy and industrial automation.
In 2021 the company went public with a $1bn+ IPO on the Nasdaq exchange, and 2023 marked the shipment of over 100 million GaN devices. In the same year the firm was recognized by Forbes as one of America’s top 50 most successful small companies and was ranked 72nd in the Deloitte Technology Fast 500 list of fast-growing North American companies. Navitas also offers what is claimed to be the industry’s first 20-year warranty for its technologies, and it was the first semiconductor company to achieve CarbonNeutral-company certification from Climate Impact Partners.
Last year Navitas officially opened its new headquarters. About 100 staff are employed in Torrance for all aspects of GaN and SiC design, applications, test, characterization and quality, alongside specialists in finance, marketing and HR.
Navitas ranked top 50 in Forbes’ 2024 Most Successful Small Companies
