News: Microelectronics
5 February 2024
Qorvo launches automotive-qualified 9m 750V SiC FET in D2PAK-7L package
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) offering what is claimed to be an industry-best on-resistance RDS(on) of 9m in a compact D2PAK-7L package.
The 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60m , making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.
The UJ4SC075009B7S features a 9m typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high-voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and is said to reduce customer manufacturing costs.
The new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.
“The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges,” says Ramanan Natarajan, director of product line marketing for Qorvo’s Power Products.
These fourth-generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a silicon MOSFET to produce a device with the efficiency advantages of wide-bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best RDS(on) and body diode reverse voltage drop.
Key features of the UJ4SC075009B7S include:
- threshold voltage VG(th) of 4.5V (typical), allowing 0-15V drive;
- low body diode VFSD of 1.1V;
- maximum operating temperature of 175°C;
- excellent reverse recovery of Qrr = 338nC;
- low gate charge: QG = 75nC;
- Automotive Electronics Council (AEC) Q101-qualified.
Qorvo/UnitedSiC launches 1200V Gen 4 SiC FETs
Qorvo acquires silicon carbide power semiconductor supplier UnitedSiC
