AES Semigas


19 February 2024

SemiQ adds full-bridge configuration to QSiC 1200V SiC MOSFET module

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices — has unveiled the latest addition to its QSiC family. The QSiC 1200V SiC MOSFET modules in full-bridge configurations deliver near-zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heat-sinks.

With a high breakdown voltage exceeding 1400V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum. Crafted from high-performance ceramics, SemiQ says that its modules achieve exceptional performance levels, increased power density, and more compact designs — especially in high-frequency and high-power environments. Consequently, they are well suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for electric vehicles (EVs) DC–DC converters and power supplies.

In solar inverter applications, SemiQ says that its technology empowers designers to achieve greater efficiency — reaching as high as 98% — as well as more compact designs. It helps to reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200V MOSFETs are also said to maximize efficiency gains in DC–DC converters while enhancing reliability and minimizing power dissipation.

To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests — including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) — are employed to attain the necessary automotive- and industrial-grade quality standards. The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.

“Our commitment lies in the meticulous optimization and customization of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” says president Dr Timothy Han.

SemiQ is debuting its QSiC product family in SOT-227, half-bridge, and full-bridge packages in booth #2245 at the Applied Power Electronics Conference (APEC 2024) in Long Beach, CA, USA (25–29 February).

SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ and 80mΩ SiC MOSFETs categories.

See related items:

SemiQ debuting QSiC 1200V MOSFET modules at APEC

SemiQ adds 5mΩ, 10mΩ and 20mΩ variants in half-bridge packages to QSiC range of 1200V MOSFET power modules

SemiQ launches 1200V 40mΩ SiC MOSFET

Tags: SiC power MOSFET



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