AES Semigas


8 February 2024

Transphorm showcasing GaN power conversion range at APEC

Transphorm Inc of Goleta, near Santa Barbara, CA, USA says that it is showcasing its broad spectrum (low to high power) gallium nitride (GaN) power conversion solutions in booth 1813 at the Applied Power Electronics Conference (APEC 2024) in Long Beach, CA, USA (25–29 February), at which it is a Silver Partner.

This year, Transphorm is highlighting innovations including what it claims is the first 1200V GaN-on-sapphire device model and leading short-circuit robustness. Its versatile SuperGaN device portfolio is also being emphasized — including recently announced packages such as the TO-247-4L, TOLL and TOLT that round out a flexible packaging selection for higher-power systems requiring different heat-sinking configurations. Lastly, on-site demonstrations showcase the firm’s technology in a wide variety of power systems, from high-performance uninterrupted and bi-directional power supplies to disruptive solar energy micro-inverters as well as 2- and 3-wheeled electric vehicle systems.

Transphorm says that ability of its GaN solutions to outperform competing options (i.e. enhancement-mode GaN, SiC, silicon) stems from the future-proofed SuperGaN platform. The firm manufactures a normally-off depletion-mode GaN technology in cascode. This design configuration is said to allow inherent platform phenomena to perform to their greatest potential. These phenomena include the two-dimensional electron gas (2DEG) GaN high-electron-mobility transistor (HEMT) channel and the SiO2/Si gate interface (created by the low-voltage MOSFET paired with Transphorm’s GaN HEMT). The company’s recently released white paper outlining these advantages can be downloaded from

Transphorm claims to support the largest range of power conversion requirements (45W to 10+kW) across the widest range of power applications. Its FET portfolio includes 650V and 900V devices with 1200V device(s) in development. These devices are JEDEC- and AEC-Q101 qualified, making them optimal solutions for power adapters and computer PSUs through to broad industrial UPSs and electric vehicle mobility systems, the firm reckons. The mix of customer products being displayed at APEC underscores the broad usability of its SuperGaN platform, it adds.

At APEC, Transphorm is giving the following presentations:

  • 26 February — Professional Education Seminar (S17) at 8:30am: ‘High Power GaN Devices and Applications’ by Davide Bisi, member of technical staff, Office of the CTO; Philip Zuk, senior VP business development & marketing; and Tushar Dhayagude, VP of worldwide sales & FAE;
  • 27 February — Exhibitor Seminar at 2:15pm: ‘The SuperGaN Difference: Advantages of Normally-Off d-Mode GaN Power Semiconductors’ by Jenny Cortez, technical sales manager;
  • 28 February — Industry Session (IS16.2) at 1:55pm: ‘GaN Four Quadrant Switch Technology for Microinverters and Motor-Drives’ by Geetak Gupta, member of technical staff, Office of the CTO;
  • 29 February — Industry Session (IS22.6) at 10:55am: ‘15-m Ω GaN Device with 5-μs Short-Circuit Withstand Time’ by Davide Bisi PhD, member of technical staff, Office of the CTO.

See related items:

Transphorm launches two 4-lead TO-247 GaN FETs for high-power server, renewable, industrial power conversion

Renesas to acquire GaN device maker Transphorm for $339m

Transphorm launches first JEDEC-standard top-side-cooled surface-mount TOLT GaN transistor

Transphorm launches 650V SuperGaN FETs in TOLL packages with on-resistances of 35m Ω, 50m Ω and 72m Ω

Tags: Transphorm GaN-on-Si GaN HEMT



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