News: Microelectronics
18 January 2024
Transphorm launches two 4-lead TO-247 GaN FETs for high-power server, renewable, industrial power conversion
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and makes JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — has announced the availability of two new 650V SuperGaN devices in a 4-lead TO-247 package (TO-247-4L).
The new TP65H035G4YS and TP65H050G4YS FETs offer a 35mΩ and 50mΩ on-resistance respectively, complete with a Kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses. The new products will run on Transphorm’s well-established GaN-on-silicon substrate manufacturing process that is claimed to be cost-effective, reliable and well-suited for high-volume manufacturing on silicon production lines.
The 50mΩ TP65H050G4YS FET is currently available, while the 35mΩ TP65H035G4YS FET is sampling and slated for release in first-quarter 2024.
Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and silicon carbide (SiC) solutions supporting power supplies at 1kW and above in a wide range of data-center, renewables and broad industrial applications. The 4-lead configuration offers flexibility to users for further improved switching performance. In a hard-switched synchronous boost converter, the 35mΩ SuperGaN 4-lead FET reduced losses by 15% at 50kHz and by 27% at 100kHz compared with a SiC MOSFET device with a comparable on resistance.
“We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” says Philip Zuk, senior VP, business development & marketing. “The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems,” he adds. “It’s an important addition to our product line as we ramp into higher-power applications.”
