News: Microelectronics
9 July 2024
US ITC finds key EPC patents valid and foundational patent infringed by Innoscience
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its GaN intellectual property rights have been upheld for the third time in three months.
The US International Trade Commission (ITC) found two of EPC’s key patents valid and that one, its foundational patent, had been infringed by Innoscience (Zhuhai) Technology Co Ltd and its affiliate Innoscience America Inc.
The ITC’s recommendation follows two recent decisions from the China National Intellectual Property Administration (CNIPA) that similarly validated EPC’s counterpart patents in China.
EPC believes that the ITC’s initial determination could lead to a ban later this year on importation of Innoscience’s infringing products into the USA.
“The ITC’s finding that Innoscience uses our patented technology without authorization puts EPC in an enviable position, as US and Chinese regulatory bodies have upheld the validity of our patents,” says CEO & co-founder Alex Lidow. “The Commission’s recommendations validate nearly two decades of hard work, resources and R&D that went into developing EPC’s uniquely valuable intellectual property portfolio.”
The ITC’s preliminary ruling found both US patents that EPC asserted against Innoscience valid. It also found “infringement [by Innoscience] of US Patent No. 8,350,294,” EPC’s foundational patent used broadly across multiple industries. The second EPC patent, US Patent No. 8,404,508, was found valid, but not infringed by Innoscience. The Commission’s final determination is expected to be issued on 5 November.
CNIPA validates EPC’s GaN gate technology patent
US Patent Office reviewing validity of two EPC patents asserted against Innoscience
Innoscience responds to EPC’s lawsuits filed at US ITC and federal courts
EPC sues Innoscience at ITC for GaN power device patent infringement
