News: Microelectronics
11 July 2024
EPC Space showcasing rad-hard solutions at NSREC 2024
At the IEEE Nuclear & Space Radiation Effects Conference (NSREC 2024) in Ottawa, Canada (22–26 July), EPC Space LLC of Haverhill, MA, USA is presenting its latest radiation-hardened (rad-hard) gallium nitride (GaN)-on-silicon technology, highlighting solutions designed to meet the rigorous demands of space applications.
The IEEE NSREC brings together experts in radiation effects, engineers and scientists to discuss the latest developments in radiation-hardened electronics and systems. EPC Space says that its participation underscores its commitment to advancing radiation-hardened power management and contributing to the evolution of space technologies.
In booth 415/417, EPC Space is showcasing its portfolio of rad-hard GaN power transistors and ICs, demonstrating their performance, efficiency and reliability in harsh radiation environments. Attendees can see live demonstrations of the firm’s GaN technology, highlighting its capabilities in real-world applications.
EPC Space launches 40V rad-hard GaN FETs with low on-resistance and gate charge
EPC Space launches rad-hard GaN gate driver IC
