News: Microelectronics
26 July 2024
Navitas releases 4.5kW AI data-center power supply reference design
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA has released its 4.5kW AI data-center power supply reference design, with optimized GaNSafe and Gen-3 ‘Fast’ (G3F) SiC power components. The optimized design enables what is claimed to be the world’s highest power density with 137W/in3 and over 97% efficiency.
Next-generation AI GPUs like NVIDIA’s Blackwell B100 and B200 each demand over 1kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30-40 kW up to 100kW.
Navitas announced its AI Power Roadmap in March, showcasing next-generation data-center power solutions for the growing demand in AI and high-performance computing (HPC) systems. The first design was a GaNFast-based 3.2kW AC-DC converter in the Common Redundant Power Supply (CRPS) form factor, as defined by the hyperscale Open Compute Project. The 3.2kW CRPS185 (for 185mm length) enabled a 40% size reduction versus the equivalent legacy silicon approach and easily exceeded the ‘Titanium Plus’ efficiency benchmark, critical for data-center operating models and a requirement for European data-center regulations.
Now, the latest 4.5kW CRPS185 design demonstrates how new GaNSafe power ICs and GeneSiC Gen-3 ‘Fast’ (G3F) MOSFETs enables the world’s highest-power-density and -efficiency solution. At the heart of the design is an interleaved CCM totem-pole PFC using SiC with full-bridge LLC topology with GaN, where the fundamental strengths of each semiconductor technology are exploited for the highest-frequency, coolest operation, optimized reliability and robustness, and highest power density and efficiency. The 650V G3F SiC MOSFETs feature ‘trench-assisted planar’ technology, which delivers what is claimed to be world-leading performance over temperature for the highest system efficiency and reliability in real-world applications.
For the LLC stage, 650V GaNSafe power ICs are claimed to be unique in the industry, with integrated power, protection, control and drive in an easy-to-use, robust, thermally adept TOLL power package. Additionally, GaNSafe power ICs offer extremely low switching losses, with a transient-voltage capability up to 800V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS), and no reverse-recovery loss (Qrr). High-speed switching reduces the size, weight and cost of passive components in a power supply, such as transformers, capacitors and EMI filters. As power density increases, next-gen GaN and SiC enable sustainability benefits, specifically CO2 reductions due to system efficiency increases and ‘dematerialization’.
The 3.2kW and 4.5kW platforms have already generated significant market interest, with over 30 data-center customer projects in development expected to drive millions in GaN and SiC revenue, ramping from 2024 into 2025.
Navitas says that its AI data-center power supply reference designs dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost, enabled by GaNFast power ICs and GeneSiC MOSFETs. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bills-of-material, layout, simulation, and hardware test results.
“AI is dramatically accelerating power requirements of data centers, processors and anywhere AI is going in the decades to come, creating a significant challenge for our industry. Our system design center has stepped up to this challenge, delivering a 3x increase in power in less than 18 months,” says CEO Gene Sheridan. “Our latest GaNFast technology, combined with our G3F SiC technology, is delivering the highest power density and efficiency the world has ever seen.”
Navitas unveils plans for 8–10kW power platform supporting 2025 AI power requirements
