AES Semigas

IQE

5 June 2024

CGD demos new ICeGaN 650V GaN ICs at PCIM Europe

At Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June), fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is demonstrating how its product portfolio is developing to address higher-power applications such as motor drives, inverters and data centers, as well as lower-power, ultra-compact smart portable device adapters and chargers.

As well as introducing a new product family, and showing a selection of informative demos at its booth (Hall 7, stand 643), CGD is giving the following presentations:

  • 11 June (15.00, Hall 9-642): CEO Dr Giorgia Longobardi is formally launching the latest ICeGaN 650V family of GaN ICs, targeting applications in the 1–5kW range;
  • 11 June (13.30, Technology Stage, Hall 7 Stand 743): CTO professor Florin Udrea is taking part in a panel discussion hosted by Markt & Technik editor Engelbert Hopf;
  • 12 June (14:20, Technology Stage, Hall 7 booth 743): professor Udrea is part of a panel discussion hosted by Bodo’s Power Systems, ‘GaN Wide Bandgap Design, the Future of Power’;
  • 13 June (14.10, Technology Stage, Hall 7 booth 743): Di Chen, director of business development & technical marketing at CGD, and José Quiñones staff applications engineer at Qorvo, are giving a joint presentation ‘GaN Power ICs and Power Application Controller Optimize Performance in BLDC and PMSM Motor Drives’.

“With its inherent ruggedness and reliability, our ICeGaN GaN ICs are perfectly suited to meet the needs of higher-power applications such as data centers and inverters,” believes chief commercial officer Andrea Bricconi. “Our presentations and demos and the new devices which we are launching at the show will illustrate our capabilities for these markets.

CGD’s booth (Hall 7-643) features reference designs, evaluation boards and demos that support its existing business in chargers and adapters as well as the new higher-power applications. New exhibits include:

  • Very high power density (30W/in3) 140W reference design produced with Taiwan’s Industrial Technology Research Institute (ITRI) board;
  • Single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles;
  • Two half-bridge evaluation boards with new thermally enhanced DFN package designs;
  • A 2.7kW totem-pole power factor correction demo board;
  • Qorvo motor drive evaluation kit using ICeGaN;
  • Demo comparing a half-bridge circuit realized using ICeGaN versus discrete e-Mode GaN.

See related items:

CGD adds new ICeGaN power IC packages with enhanced thermal performance

Tags: GaN power devices

Visit: www.mesago.de/en/PCIM/

Visit: www.camgandevices.com

RSS

Book This Space