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6 June 2024

EPC Space launches 40V rad-hard GaN FETs with low on-resistance and gate charge

EPC Space LLC of Haverhill, MA, USA has launched two new radiation-hard gallium nitride (GaN) discretes with low on-resistance and extremely low gate charge for high-power-density solutions that are lower cost and more efficient than the nearest comparable rad-hard silicon MOSFET.

The EPC7001BSH is a rad-hard eGaN 40V, 50A, 11mΩ surface-mount (FSMDB) and the EPC7002ASH is a rad-hard eGaN 40V, 15A, 28mΩ surface-mount (FSMDA). Both devices have a total dose radiation rating greater than 1000K Rad(Si) and SEE (single event effect) immunity for LET (linear energy transfer) of 83.7MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints.

EPC’s eGaN FETs and ICs offer a higher-performing alternative to conventional rad-hard silicon devices for high reliability and space applications. EPC’s rad-hard devices are said to be significantly smaller, have 40 times better electrical performance, and lower overall cost than rad-hard silicon devices. Moreover, EPC Space’s rad-hard devices exhibit what is claimed to be superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared with traditional silicon solutions.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN are said to significantly outperform silicon-based devices and enable higher switching frequencies, resulting in higher power densities, higher efficiencies and more compact and lighter-weight circuitry for critical space-borne missions.

Applications benefiting from the performance of these products include DC–DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high-power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” says EPC Space’s CEO Bel Lazar.

Pricing for 500-unit quantities is $212.80 each for engineering models and $315.84 each for space-level grade. Products are available with lead-times of 4 and 12 weeks or less for engineering models and space levels, respectively.

See related items:

EPC Space launches rad-hard GaN gate driver IC

Avnet to distribute EPC Space’s rad-hard GaN power devices

EPC Space launches first rad-hard GaN power stage IC

Tags: EPC

Visit: www.epc.space

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