AES Semigas


10 June 2024

Mitsubishi Electric ships lower-power 3.3kV SBD-embedded SiC-MOSFET modules

Tokyo-based Mitsubishi Electric Corp has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module.

Together with the existing 3.3kV/800A version launched on 29 March, the newly named Unifull series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.

Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules feature an optimized package structure to reduce switching loss and improve SiC performance. Compared with existing power modules, Unifull modules are claimed to significantly reduce switching loss and contribute to higher power output and power conversion efficiency in the inverters of large industrial equipment.

The new low-current modules are specifically suitable for the auxiliary power supplies in railcar rolling stock as well as drive systems with relatively small capacities, expanding the range of applications.

The new modules are being exhibited at trade shows including Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June).

Tags: Mitsubishi Electric SiC power MOSFET




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