News: Microelectronics
14 June 2024
Mitsubishi Electric sampling 8W and 14W GaN MMIC power amplifier chips
On 1 July, Tokyo-based Mitsubishi Electric Corp will begin sampling 8W and 14W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers, shipped as customer-board-friendly bare chips, suitable for use in emergency communications and Ka-band multi-carrier satellite-communication (SATCOM) earth stations.
While the mainstream frequency for satellite communications is currently the Ku-band (13-14GHz), the higher-frequency Ka-band (27.5–31GHz) offers multi-beam technology and much wider bandwidth for transmitting more data. The two new GaN MMIC power amplifiers will support the power levels and frequencies required for Ka-band satellite communications transmitters capable of handling large amounts of data.
In addition, due to a new high-output, high-efficiency GaN HEMT, Mitsubishi Electric’s new chips are claimed to achieve unsurpassed miniaturization and increased power-added efficiency (PAE) of more than 20% at maximum linear power.
By adding more Ka-band products to its lineup, Mitsubishi Electric expects to meet the growing demand for high-capacity communications and to contribute to smaller and more power-efficient satellite communications earth stations.
Picture: Example of final-stage circuitry of transmitters for Ka-band satellite communications earth station.
The new products are being exhibited at the IEEE MTT-S International Microwave Symposium (IMS) 2024 in Washington DC, USA (18–20 June).
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