News: Microelectronics
7 June 2024
Navitas launches Gen-3 Fast 650V and 1200V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650V and 1200V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data-center power supplies, on-board chargers (OBCs), fast electric vehicle (EV) roadside super-chargers, and solar/energy-storage systems (ESS). The broad portfolio spans industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in a 40% improvement to hard-switching figures-of-merits (FOMs) compared with competition in CCM TP PFC systems. This can enable an increase in the wattage of next-generation AI power supply units (PSUs) up to 10kW, and an increase in power per rack from 30kW to 100–120kW.
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology and are said to offer better-than-trench MOSFET performance while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors, it is claimed.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared with competition, it is reckoned.
Additionally, all GeneSiC MOSFETs have what is claimed to be the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. GeneSiC MOSFETs are hence suitable for high-power, fast-time-to-market applications.
Navitas’ latest 4.5kW high-power-density AI server PSU reference design in CRPS185 form factor showcases the 650V-rated, 40mΩ G3F FETs for an interleaved CCM TP PFC topology. Alongside the GaNSafe power ICs in the LLC stage, a power density of 138W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1200V/34mΩ (G3F34MT12K) G3F FETs enable Navitas’ new 22kW, 800V bi-directional OBC and 3kW DC–DC converter to achieve a power density of 3.5kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” says Dr Sid Sundaresan, senior VP of SiC technology & operations. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Navitas highlights power semis for AI, EV, industrial, solar and energy storage at PCIM
