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11 June 2024

Nexperia’s 650V SiC Schottky diodes now automotive-qualified and available in R2P DPAK packaging

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology Co Ltd) says that its 650V, 10A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for applications in electric vehicles (EVs) and other automobiles.

Additionally, in a further extension to its portfolio of SiC diodes, Nexperia is now also offering industrial-grade devices with current ratings of 6A, 16A and 20A in TO-220-2, TO-247-2 and D2PAK-2 packaging to facilitate greater design flexibility. These diodes address the challenges of demanding high-voltage and high-current applications including switched-mode power supplies (SMPS), AC–DC and DC–DC converters, battery-charging infrastructure, motor drives, uninterruptible power supplies (UPS) as well as photovoltaic inverters for sustainable energy production.

The merged PiN Schottky (MPS) structure of these devices is said to provide additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications. Nexperia says that its consistent quality across various semiconductor technologies provides designers with confidence in the reliability of these diodes.

In addition, Nexperia’s ‘thin SiC’ technology delivers a thinner substrate (one-third of its original thickness), which dramatically reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.

“We’ve seen an excellent market response to the initial release of our SiC diodes. They have proven themselves in design-ins, with one notable example in power supplies for industrial applications, where customers have achieved especially good results,” says Katrin Feurle, senior director & head of product group SiC Diodes & FETs at Nexperia. “The superior reverse recovery of these diodes translates to high efficiency in real-world use,” she adds. “This is our first automotive-qualified product, and it is already recognized by major automotive players for its performance and reliability.”

See related items:

Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors

Nexperia launches 650V SiC diodes for demanding power conversion applications

Nexperia expands wide-bandgap range by entering high-power silicon carbide diode market

Tags: SiC power MOSFET

Visit: www.nexperia.com

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