News: Microelectronics
20 June 2024
pSemi launches high-power, high-linearity SP4T RF switch
Murata company pSemi Corp of San Diego, CA, USA has launched the PE42447 high-power, high-linearity single-pole four-throw (SP4T) RF switch, manufactured using the firm’s silicon-on-insulator (SOI) technology, now supporting frequency ranges spanning 10MHz to 8GHz. The switch delivers extremely low insertion loss and high linearity with high input power handling capability, making it suitable for hybrid beam-forming in wireless infrastructure as well as other applications in broad markets that requires such performance.
Manufactured on pSemi’s patented UltraCMOS technology and packaged on a 20-lead 4mm x 4mm LGA package, the PE42447 features low insertion loss of 0.4dB at 2.6GHz and 0.5dB at 3.8GHz. The switch has high linearity of 85dBm IIP3, high power handling of up to 100W, and switching time of about 1μs. Its tolerance of 115°C ambient temperature makes it suitable for applications in a rugged environment including, but not limited to, wireless infrastructure.
Picture: pSemi’s PE42447 high-power, high-linearity SP4T RF switch, supporting frequency ranges spanning 10MHz to 8GHz.
“Building on the success of our portfolio of industry-leading RF high-power switches, the PE42447 expands frequency range for a broader range of applications,” says Rodd Novak, VP of sales & marketing. “The combination of high power handling, high linearity and extremely low insertion loss while maintaining all the benefits of an UltraCMOS switch delivers a great solution for our customers’ needs when it comes to 5G MIMO, 4G/4.5G TD-LTE, and many other use cases.”
Samples for the PE42447 are available now, prior to commercial availability in second-half 2024.
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