News: Microelectronics
12 June 2024
Qorvo launches first 4mΩ SiC JFET in TOLL package
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the industry's first 4mΩ silicon carbide (SiC) junction field-effect transistor (JFET) in a TOLL package, designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size and reliability are paramount.
With an RDS(on) of just 4mΩ, the UJ4N075004L8S offers what is said to be the industry’s lowest on-resistance in the 650–750V class of power devices in standard discrete packages. This low RDS(on) drives significant reductions in heat generation and, when coupled with a compact TOLL package, enables a solution size that is 40% smaller than competing devices in TO-263 packages, it is reckoned. This small solution size supports the space-limited dimensions of today’s electro-mechanical circuit breakers and operates without the need for elaborate cooling systems, accelerating the transition from electro-mechanical circuit breakers to semiconductor-based solid-state circuit breakers (SSCBs).
“The SSCB market is growing rapidly, and Qorvo’s newest product marks a significant milestone in the evolution of the technology,” claims Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business.
Qorvo says that its JFETs are highly robust devices suited to meet the challenges of circuit protection, providing the ability to turn off at very high inrush currents during circuit faults. Qorvo’s newest JFET can also withstand high instantaneous junction temperatures without experiencing degradation or parametric drift. The normally-on nature of the JFET lends itself to seamless integration into systems where the switch is in the on-state by default and in turn-off state under fault conditions.
The UJ4N075004L8S is available now for sampling and will enter full production in fourth-quarter 2024, accompanied by additional JFET options, including 750V with 5mΩ and 1200V with 8mΩ ratings, all in TO-247 packaging.
Qorvo is exhibiting in booth 7-406 at the Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June).
Qorvo acquires silicon carbide power semiconductor supplier UnitedSiC
