AES Semigas


25 June 2024

Riber receives order for MBE 49 GaN production system

Molecular beam epitaxy (MBE) system maker Riber S.A. of Bezons, France says that an industrial customer in Asia has ordered an MBE 49 production system, for delivery in 2025. The system will be used to boost production capacity for gallium nitride (GaN) optoelectronic components used in consumer applications such as fast chargers, on-board chargers, power supplies and converters, as well as for research into new applications in the automotive industry.

Characterized by their high switching speed and exceptional efficiency, GaN-based devices are attracting a much interest in power applications, where the industry is seeking to reduce the size and weight of systems while increasing their efficiency.

The MBE 49 GaN machine is specifically designed for the GaN fabrication process, providing a specific pumping configuration as well as highly stable, uniform and repeatable effusion cells for the development of III-nitride optoelectronic devices.

Riber says that the new order demonstrates the growing market adoption of the MBE 49 system, which is recognized as one of the most efficient multi-wafer thin-film deposition platforms for the development of electronic applications based on compound semiconductors, it is claimed. The developments and technical improvements made to the MBE 49 GaN platform are the result of a collaborative program between Riber and the CNRS–CRHEA (Centre de Recherche sur L’Hétéro-Epitaxie et ses Applications — Centre National de la Recherche Scientifique) in Sophia Antipolis, France, which specializes in epitaxial growth of wide-bandgap semiconductor materials.

See related items:

Riber receives order for MBE 49 production system

Riber’s MBE 49 GaN aims to compete with MOCVD for 200mm GaN-on-Si

Tags: Riber MBE



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