News: Microelectronics
19 June 2024
Tagore launches high-power GaN SPDTs for broadband switching
Chicago-based fabless firm Tagore Technology Inc - which was founded in 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) and gallium nitride-on-silicon carbide (GaN-on-SiC) technology for RF and power management applications — has introduced the TS8728N and TS8729N asymmetrical reflective single-pole double-throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer what is claimed to be best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well suited for L- and S-band radar and cellular infrastructure applications.
The TS8728N and TS8729N operate with a single +5V supply and switch with a single control voltage (0V to 3V). They can be tuned to specific RF bands within the range of 0.3–5.0GHz by modifying select external SMT components.
The new devices are compact, integrated high-power SPDT switches with on-board driver circuits. TS8729N can cover 500MHz to 2.0GHz and provide very high RF power handling and high linearity within a small package size. The TS8728N covers 0.5–5.0GHz and has been optimized for switching speed.
“The TS8728N and TS8729N feature low TX and RX insertion loss, high isolation with very low DC power consumption and require minimal external components, enabling a smaller PCB footprint” says chief sales & marketing officer Klaus Buehring.
The TS8728N and TS8729N are packaged in a compact quad flat no-lead (QFN) 5mm x 5mm 32-lead plastic package.
Tagore launches antenna-tuning SP4T RF switch with 100V peak RF voltage and 1Ω on-resistance
