News: Microelectronics
27 June 2024
Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has introduced 16 new Gen 3 1200V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the devices combine high surge current robustness with low forward voltage drop, capacitive charge and reverse leakage current to increase efficiency and reliability in switching power designs.
The new-generation SiC diodes consist of 5–40A devices in the TO-220AC 2L, TO-247AD 2L and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages. The diodes offer a low capacitance charge down to 28nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35V. In addition, the devices’ low typical reverse leakage current down to 2.5µA at 25°C reduces conduction losses, ensuring high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.
Typical applications for the diodes include AC/DC PFC and DC/DC ultra-high-frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and data centers. For the harsh environments of these applications, the devices combine operating temperatures up to +175°C with forward surge ratings up to 260A for high robustness. In addition, diodes in the D2PAK 2L package feature a molding compound with a high CTI≥600, ensuring excellent electrical insulation at elevated voltages.
Offering high reliability, the RoHS-compliant and halogen-free devices have passed higher-temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.
Samples and production quantities of the new SiC diodes are available now, with lead times of 13 weeks.
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