News: Microelectronics
11 June 2024
VisIC presenting new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMTs at PCIM
At Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June), VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – is presenting its new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMT power devices as well as a new range of power modules with over 650V/500Arms current for battery electric vehicles, AI data-center and renewable energy applications.
VisIC says that the market is moving quickly from silicon to silicon carbide (SiC) and nowadays to the next megatrend of GaN-on-silicon to reduce the CO2 footprint in power conversion applications. Utilizing its economic scale of 8” (200mm) silicon-based wafers and future 12” (300mm) wafers means that there is no concern about supply risk and future cost reduction, the firm adds.
In Hall 9, booth 9–212 at PCIM, VisIC is showcasing its D3GaN products, including a D3GaN Inverter Demonstrator on a motor dyno testing with over 130kW and WLTP results.
Also at PCIM 2024, in Bodo Power Systems’ panel discussion ‘GaN Wide Bandgap Design, the Future of Power’ (12 June, 14:20–15:20, on the Technology Stage in Hall 7-743), VisIC’s founder & CEO Tamara Baksht is talking about ‘D3GaN for EV Inverter’.
