News: Microelectronics
14 June 2024
WIN announces beta release of NP12-0B mmWave RF GaN-on-SiC technology
WIN Semiconductors Corp of Taoyuan City, Taiwan – which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructur and networking markets – has expanded its portfolio of RF GaN technologies with the beta release of its highly robust NP12-0B millimeter-wave (mmWave) gallium nitride on silicon carbide (GaN-on-SiC) technology.
Core to this platform is a 0.12μm-gate RF GaN HEMT technology incorporating multiple refinements to enhance DC and RF ruggedness and add die-level moisture resistance. NP12-0B integrates multiple transistor improvements providing high ruggedness when operated in deep-saturation/high-compression pulsed and continuous-wave (CW) conditions. This new rugged technology is said to eliminate the pulse droop behavior seen in GaN HEMT power amplifiers, improving the range and sensitivity of pulsed-mode radar systems. Additionally, NP12-0B is available with the Enhanced Moisture Ruggedness option and provides what is claimed to be excellent humidity resistance when used in plastic packages.
Supporting full MMICs, the NP12-0B platform allows customers to develop compact pulsed or CW saturated power amplifiers for applications through 50GHz. This process is qualified for 28V operation, and in the 29GHz band generates saturated output power of 4.5W/mm with 12dB linear gain and over 40% power-added efficiency (PAE). The NP12-0B technology is suitable for rugged pulsed-mode high-power amplifiers used in advanced radar systems.
NP12-0B has reached beta release and is available for early-access multi-project wafer (MPW) runs. Qualification testing is complete and final modeling/PDK (process design kit) generation is expected to conclude in August, with full production release scheduled for late third-quarter 2024.
WIN is showcasing its compound semiconductor RF and mm-Wave solutions in booth 531 at the 2024 IEEE MTT-S International Microwave Symposium (IMS) at the Walter E. Washington Convention Center in Washington DC (16-21 June).
WIN releases 50V RF GaN technology for high-power MMICs
