News: Microelectronics
1 March 2024
EPC launches first GaN FET with 1mΩ on-resistance
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the 100V, 1mΩ EPC2361, which is claimed to be the lowest on-resistance gallium nitride (GaN) field-effect transistor (FET) on the market, offering double the power density compared with EPC’s prior-generation products.
The EPC2361 has a typical RDS(on) of just 1mΩ in a thermally enhanced QFN package with exposed top and a footprint of just 3mm x 5mm. The maximum RDS(on) x Area of the EPC2361 is 15mΩ*mm2 — over five times smaller than comparable 100V silicon MOSFETs.
With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This is particularly significant for applications such as high-power PSU AC–DC synchronous rectification, high-frequency DC–DC conversion for data centers, motor drives for eMobility, robotics, drones, and solar MPPT (maximum power point tracking).
“Our new 1mΩ GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact and reliable power electronics systems,” says CEO & co-founder Alex Lidow.
The 2” x 2” (50.8mm x 50.8mm) EPC90156 development board is a half-bridge featuring the EPC2361 GaN FET. Designed for optimal switching performance, it contains all critical components for easy evaluation.
The EPC2361 is priced at $4.60 each in 3 Ku volumes. The EPC90156 development board is priced at $200 each.
