News: Microelectronics
12 March 2024
Infineon launches CoolSiC MOSFETs 2000V product family
Infineon Technologies AG of Munich, Germany has launched the CoolSiC MOSFETs 2000V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system's reliability even under demanding high-voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is claimed to be the first discrete silicon carbide device with a breakdown voltage of 2000V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14mm and clearance distance of 5.4mm. With low switching losses, the devices are suitable for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.
Picture: Infineon’s new CoolSiC MOSFETs 2000V.
The CoolSiC MOSFET 2000V product family is suitable for high DC link systems with up to 1500VDC. Compared with 1700V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500VDC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5V and are equipped with a robust body diode for hard commutation. Due to the .XT connection technology, the components offer what is said to be first-class thermal performance. They are also highly resistant to humidity.
In addition to the CoolSiC MOSFETs 2000V, Infineon will soon be launching the matching CoolSiC diodes: The first launch will be the 2000V diode portfolio in the TO-247PLUS 4-pin package in third-quarter 2024, followed by the 2000V CoolSiC diode portfolio in the TO-247-2 package in fourth-quarter 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.
The CoolSiC MOSFET 2000V product family is available now. In addition, Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000V and the EiceDRIVER Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation.
Infineon adds 62mm package to CoolSiC 1200V and 2000V MOSFET module families
