News: Microelectronics
1 March 2024
ROHM's EcoGaN used in Innergie’s 45W output USB-C charger C4 Duo
Japan-based ROHM Semiconductor says that its 650V GaN device (EcoGaN) has been adopted in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Taiwan-based power supply maker Delta Electronics Inc.
ROHM began the mass production of 150V-withstand GaN HEMTs in 2022 and 650V-withstand GaN HEMTs in 2023 with what it claims is industry-leading device performance (R DS(ON) x Ciss/RDS(ON) x Coss). Most recently, integrating an ESD protection element into the GNP1150TCA-Z improves ESD breakdown tolerance by about 75% over standard GaN HEMTs, it is reckoned, and has been evaluated to improve application reliability, ultimately leading to its adoption.
“The development of GaN power devices is a major focus in the global electronics industry, and therefore we have deepened our collaboration with ROHM over the past several years,” notes Innergie’s general manager Jason Chen. “Moreover, in 2022, we initiated a strategic partnership to jointly develop next-generation power semiconductors for power supply systems. This partnership has delivered ROHM’s advanced 650V GaN (GNP1150TCA-Z) devices, which are now supporting Innergie’s new products,” he adds. “The C4 Duo is the first model from Innergie’s One for All Series adapters to use ROHM’s GaN devices, and we expect more models to adopt this state-of-the-art technology… By strengthening our collaboration with ROHM, we will be able to provide customers adapters featuring higher power efficiency and capability but with much smaller product size.”
ROHM begins mass production of 650V GaN HEMTs
ROHM and Delta partner on developing and mass producing GaN devices
