News: Microelectronics
30 May 2024
Cambridge GaN Devices signs MoU with ITRI covering GaN-based power supply development
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has signed a memorandum of understanding (MoU) with Taiwan’s Industrial Technology Research Institute (ITRI) to solidify a partnership in developing high-performance GaN solutions for USB-PD adaptors. The MoU also covers the sharing of domestic and international market information, joint visits to potential customers, and promotion.
Picture: Demonstration 140-240W USB-PD adaptor using ICeGaN.
“We are excited to partner with ITRI, an organization with a power solution research team that is very experienced in developing power solutions and holds many patents,” comments CGD’s chief commercial officer Andrea Bricconi. “We will be demonstrating some of their board designs at our booth at the upcoming PCIM [Power, Control and Intelligent Motion] show in Nuremberg in June. These products utilize CGD’s unique IC chip architecture and ITRI’s patented designs to achieve product size reduction, high efficiency and power density, and cost competitiveness,” he adds.
“CGD’s IC-enhanced GaN — ICeGaN — is a novel platform that improves ease-of-use, facilitates smart temperature control and enhances gate reliability,” says Wen-Tien Tsai, leader of the Commercial Power Design team at ITRI’s Green Energy & Environment Research Laboratories (GEL). “We are excited to include these benefits in our new power designs.”
According to market analyst firm Yole Group, the GaN market is expected to exceed $1bn, with key growth in the applications of comms power supplies, and automotive DC/DC converters and on-board chargers. However, the first commercialized product in the market to adopt GaN devices has been USB-PD adaptors, and it is this market that the first designs from the partnership will address. Specifically, the agreement covers the development of power solutions in the 140–240W range with power densities exceeding 30W/in3 for e-mobility, power tools, notebook and cell-phone applications.
