AES Semigas


8 May 2024

CNIPA validates EPC’s GaN gate technology patent

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC’s patent ‘Compensated gate MISFET and method for fabricating the same’ (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The decision on 30 April follows a 2 April announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent ‘Enhancement mode GaN HEMT device and method for fabricating the same’ (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by China-based gallium nitride-on-silicon (GaN-on-Si) power solutions firm Innoscience (Suzhou) Technology Co Ltd.

Chinese Patent No. ZL201080015425.X covers the fundamental design and configuration of EPC’s proprietary enhancement-mode GaN field-effect transistors (FETs) with reduced gate leakage. Most industry participants employ the GaN gate technology covered by this patent, it is claimed.

“These are two of the foundational patents supporting our broad portfolio of innovations, and we are pleased that the CNIPA has again confirmed the validity of our valuable intellectual property,” says EPC’s CEO & co-founder Alex Lidow. “Quick, fair and efficient decisions such as these reinforce the confidence in legal systems that companies need to operate globally.”

In May 2023, EPC filed complaints in the US federal court in Los Angeles and in the US International Trade Commission, asserting that Innoscience (Zhuhai) Technology Co Ltd and its affiliates infringe patents of its foundational patent portfolio, which include the US counterparts of EPC’s Chinese Patent Nos. ZL201080015425.X and ZL201080015388.2. In response, Innoscience had petitioned the CNIPA to invalidate the two Chinese patents.

See related items:

US Patent Office reviewing validity of two EPC patents asserted against Innoscience

Innoscience responds to EPC’s lawsuits filed at US ITC and federal courts

EPC sues Innoscience at ITC for GaN power device patent infringement

Tags: GaN-on-Si EPC



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