News: Microelectronics
28 May 2024
Infineon unveils CoolSiC MOSFET 400V family
With the increasing power requirements of artificial intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2kW and more per chip by the end of the decade.
Infineon Technologies AG Munich, Germany says that these needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements, have prompted it to extend the development of SiC MOSFETs to voltages below 650V. The firm is now launching the new CoolSiC MOSFET 400V family, which is based on the second-generation (G2) CoolSiC technology introduced in early March.
The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s PSU roadmap unveiled this May. The devices are also suitable for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
Picture: Infineon’s CoolSiC 400V MOSFETs, developed for the AC/DC stage of AI server power supplies.
“Infineon offers an extensive portfolio of high-performance MOSFETs and GaN transistors to meet the demanding design and space requirements of AI server power supplies,” says Richard Kuncic, head of the Power Systems business line. “We are committed to supporting our customers with advanced products such as the CoolSiC MOSFETs 400V G2 to drive highest energy efficiency in advanced AI applications.”
The new family features ultra-low conduction and switching losses compared with existing 650V SiC and silicon MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI server PSU can attain a power density of more than 100W/in3 and is proven to reach 99.5% efficiency. This is an improvement of 0.3 percentage points over solutions using 650V SiC MOSFETs. In addition, the system solution for AI server PSUs is completed by implementing CoolGaN transistors in the DC/DC stage. With this combination of high-performance MOSFETs and transistors, the power supply can deliver more than 8kW with an increase in power density by a factor of more than 3 compared with existing solutions.
The new MOSFET portfolio comprises a total of 10 products: five RDS(on) classes from 11mΩ to 45mΩ in Kelvin-source TOLL and D2PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400V at Tvj = 25°C makes them suitable for use in 2- and 3-level converters and for synchronous rectification. The components offer high robustness under harsh switching conditions and are 100% avalanche tested. The highly robust CoolSiC technology, in combination with the .XT interconnect technology, enables the devices to cope with power peaks and transients caused by sudden changes in the power requirements of the AI processor. Both the connection technology and a low and positive RDS(on) temperature coefficient enable excellent performance under operating conditions with higher junction temperatures.
Engineering samples of the CoolSiC MOSFET 400V portfolio are now available and will enter series production from October onwards. The latest generation of Infineon’s CoolSiC MOSFETs is being showcased in the Infineon booth at Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June).
Infineon launches CoolSiC MOSFET Generation 2
