News: Microelectronics
1 May 2024
Navitas highlights EV high-speed hybrid power semiconductor advances in keynote at China Innovation Summit
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA participated in the China Electronic Hotspot Solutions Innovation Summit in Shenzhen on 27 April, which gathered key players in power semiconductors and associated customer design teams for innovations in electric vehicles (EV) such as 800V supercharging, battery management, intelligent connected vehicle electronics, and high-power digital power supplies. EV OEM attendees this year included experts from Voyah and Dongfeng.
Navitas’ technical marketing manager Jacky Xiao delivered a keynote ‘High-Frequency On-Board Charger Solutions Based on Hybrid Design of SiC and GaN’ to introduce how Navitas can create more efficient, smaller and lighter on-board charging for EVs. Navitas says that, without compromise, customers can select its optimal, feature-rich GaN and SiC power devices in robust, thermally enhanced TOLL and TOLT packaging, to create hybrid powertrain solutions that deliver faster charging, longer range and lower systems costs.
Navitas’ GaNFast power ICs integrate GaN power and drive with control, sensing and protection to enable faster charging, higher power density, greater energy savings and system cost reduction. New ‘Gen-3 Fast’ GeneSiC MOSFETs are reckoned to have up to 50% improved performance versus other SiC devices. Summit exhibition attendees were able to explore the latest in EV-optimized GaNFast and GeneSiC products and complete EV system hardware solutions and learn how to accelerate their projects.
“Navitas’ leading GaN and SiC technology will enable faster charging, longer-range and more environmentally friendly power systems for EV,” says Charles Zha, VP & general manager of Navitas China. “These improvements not only significantly enhance product performance but also effectively shorten time-to-market.”
Navitas celebrates tenth anniversary
