News: Microelectronics
23 May 2024
Navitas highlights power semis for AI, EV, industrial, solar and energy storage at PCIM
In its ‘Planet Navitas’ booth #544 (Hall 9) at Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany (11–13 June), Navitas Semiconductor Corp of Torrance, CA, USA is highlighting how its gallium nitride (GaN) and silicon carbide (SiC) technology enables the latest solutions for a broad array of fast-growing markets and applications from 20W to 20MW, including fully electrified EV transportation, AI data centers, industrial compressors, drives and robotics plus renewable energy sourcing and storage. Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6Gtons/year CO2 by 2050.
“Complementary GaNFast and GeneSiC portfolios — with comprehensive, application-specific system design support — accelerate customer time-to-market with sustainable performance advantages,” says Alessandro Squeri, senior director for European sales. “‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6bn identified customer pipeline as part of a vast $22bn/year market opportunity.”
Technology updates and releases include GaNSafe — claimed to be the world’s most protected, most reliable and highest-performance GaN power, Gen-4 GaNSense Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs — for motor drive and energy-storage applications.
In addition to the exhibition, at PCIM Navitas is giving the following peer-review technical presentations:
- 11 June (13–14:30, Hall 10.1) — ‘Low-Cost High-Density 300W/20V AC–DC Converter Enabled by GaN Power ICs’ by senior director of strategic marketing Tom Ribarich. A low-cost 300W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC–DC stage, and a synchronous rectification output stage. The design includes GaN power ICs and off-the-shelf controllers running at 300kHz. This new design has resulted in a cased power density of 1.1W/cc.
- 12 June (15:30–17:00, Foyer) — ‘Evaluation of SiC Devices for Over 500kHz Application Based on Buck Circuit’ by senior staff applications engineer Minli Jia. This paper selects three 1200V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a buck converter with an output power of 3.6kW and a switching frequency of 600kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.
