News: Microelectronics
21 May 2024
Nexperia’s 1200V SiC MOSFETs made available in D2PAK-7 SMD packages
Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology Co Ltd) is now offering its 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface-mount device (SMD) packaging, with a choice of 30mΩ, 40mΩ, 60mΩ and 80mΩ RDSon resistance values.
Following Nexperia’s release in late 2023 of two discrete SiC MOSFETs in 3- and 4-pin TO-247 packaging, this the latest offering in a series that will see the firm’s SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17mΩ, 30mΩ, 40mΩ, 60mΩ and 80mΩ in flexible package options.
With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high-performance SiC switches in SMD packages like D2PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).
It is also further testimony to Nexperia’s successful strategic partnership with Mitsubishi Electric Corp (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide-bandgap semiconductors to the next level while additionally future-proofing production capacity for this technology in response to ever growing market demand.
As a critical performance parameter for SiC MOSFETs, RDSon impacts conduction power losses. However, many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable conduction losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer what is claimed to be industry-leading temperature stability, with the nominal value of RDSon increasing by only 38% over an operating temperature range from 25°C to 175°C.
Nexperia says that the tightest threshold voltage VGS(th) specification allows these discrete MOSFETs to offer balanced current-carrying performance when connected in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter that increases device robustness and efficiency, while also relaxing the dead-time requirement during freewheeling operation.
Nexperia launches discrete 1200 V devices as its first silicon carbide MOSFETs
Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors
